Suchergebnisse
LBZ-Katalog
Aufsätze und mehr
Suchmaske
Suchergebnisse einschränken oder erweitern
Aktive Suchfilter
Weniger Treffer
Art der Quelle
Thema
- metal oxide semiconductor field-effect transistors 8 Treffer
- silicon 8 Treffer
- logic gates 6 Treffer
- silicon-on-insulator technology 5 Treffer
- germanium 4 Treffer
-
45 weitere Werte:
- mosfet 4 Treffer
- complementary metal oxide semiconductors 3 Treffer
- electron mobility 3 Treffer
- equations 3 Treffer
- mathematical model 3 Treffer
- mathematical models 3 Treffer
- mobility 3 Treffer
- mosfets 3 Treffer
- substrates 3 Treffer
- surface roughness 3 Treffer
- threshold voltage 3 Treffer
- ultrathin body (utb) 3 Treffer
- electrostatics 2 Treffer
- finfets 2 Treffer
- silicon-on-insulator (soi) 2 Treffer
- substrates (materials science) 2 Treffer
- variability 2 Treffer
- activation energy 1 Treffer
- algan/gan heterostructure 1 Treffer
- aluminum gallium nitride 1 Treffer
- approximation theory 1 Treffer
- back gate 1 Treffer
- capacitance 1 Treffer
- channel depth 1 Treffer
- chemical vapor deposition 1 Treffer
- crystallinity 1 Treffer
- crystallography 1 Treffer
- data models 1 Treffer
- depletion-mode field-effect transistor (fet) 1 Treffer
- dielectrics 1 Treffer
- dispersion 1 Treffer
- double gate 1 Treffer
- drain-induced barrier lowering (dibl) 1 Treffer
- drift diffusion (dd) 1 Treffer
- effective mass 1 Treffer
- electric capacity 1 Treffer
- electric fields 1 Treffer
- electric insulators & insulation 1 Treffer
- electric potential 1 Treffer
- electron gas 1 Treffer
- electron work function 1 Treffer
- electronic band structure 1 Treffer
- electronics 1 Treffer
- energy function 1 Treffer
- energy-band theory of solids 1 Treffer
Sprache
Inhaltsanbieter
13 Treffer
-
In: IEEE Transactions on Electron Devices, Jg. 69 (2022-09-01), Heft 9, S. 4828-4834academicJournalZugriff:
-
In: IEEE Transactions on Electron Devices, Jg. 68 (2021-02-01), Heft 2, S. 497-502academicJournalZugriff:
-
In: IEEE Transactions on Electron Devices, Jg. 65 (2018-03-01), Heft 3, S. 895-900academicJournalZugriff:
-
In: IEEE Transactions on Electron Devices, Jg. 64 (2017-11-01), Heft 11, S. 4615-4621academicJournalZugriff:
-
In: IEEE Transactions on Electron Devices, Jg. 64 (2017-10-01), Heft 10, S. 3986-3990academicJournalZugriff:
-
In: IEEE Transactions on Electron Devices, Jg. 60 (2013-04-01), Heft 4, S. 1485-1489academicJournalZugriff:
-
In: IEEE Transactions on Electron Devices, Jg. 59 (2012-04-01), Heft 4, S. 941-948academicJournalZugriff:
-
In: IEEE Transactions on Electron Devices, Jg. 59 (2012), Heft 1, S. 247-251academicJournalZugriff:
-
In: IEEE Transactions on Electron Devices, Jg. 58 (2011-03-01), Heft 3, S. 600-608academicJournalZugriff:
-
In: IEEE Transactions on Electron Devices, Jg. 55 (2008-05-01), Heft 5, S. 1203-1210academicJournalZugriff:
-
In: IEEE Transactions on Electron Devices, Jg. 54 (2007-05-01), Heft 5, S. 1125-1131academicJournalZugriff:
-
In: IEEE Transactions on Electron Devices, Jg. 52 (2005-11-01), Heft 11, S. 2430-2439academicJournalZugriff:
-
In: IEEE Transactions on Electron Devices, Jg. 52 (2005-04-01), Heft 4, S. 561-568academicJournalZugriff: