Suchergebnisse
LBZ-Katalog
Aufsätze und mehr
Suchmaske
Suchergebnisse einschränken oder erweitern
Aktive Suchfilter
Weniger Treffer
Art der Quelle
Thema
- fabrication 3 Treffer
- silicon on insulator technology 3 Treffer
- cmos technology 2 Treffer
- dopant segregation (ds) 2 Treffer
- platinum 2 Treffer
-
45 weitere Werte:
- silicides 2 Treffer
- (110) 1 Treffer
- annealing 1 Treffer
- capacitive sensors 1 Treffer
- carrier confinement 1 Treffer
- circuit stability 1 Treffer
- cmos process 1 Treffer
- communications technology 1 Treffer
- conductivity 1 Treffer
- contact resistance 1 Treffer
- degradation 1 Treffer
- displays 1 Treffer
- doping 1 Treffer
- effective mass 1 Treffer
- electric variables measurement 1 Treffer
- electrical resistance measurement 1 Treffer
- fets 1 Treffer
- finfet 1 Treffer
- finfets 1 Treffer
- fluctuations 1 Treffer
- fully depleted silicon-on-insulator (soi) 1 Treffer
- germanium silicon alloys 1 Treffer
- hole mobility 1 Treffer
- insulation 1 Treffer
- laboratories 1 Treffer
- leakage 1 Treffer
- mobility 1 Treffer
- mosfet circuits 1 Treffer
- particle scattering 1 Treffer
- performance 1 Treffer
- platinum silicide 1 Treffer
- quantum confinement effect 1 Treffer
- random access memory 1 Treffer
- random dopant fluctuations (rdfs) 1 Treffer
- resource description framework 1 Treffer
- robustness 1 Treffer
- semiconductor films 1 Treffer
- silicidation 1 Treffer
- silicon germanium 1 Treffer
- silicon-on-insulator (soi) 1 Treffer
- sram chips 1 Treffer
- stability 1 Treffer
- static random access memory (sram) 1 Treffer
- substrates 1 Treffer
- temperature 1 Treffer
Inhaltsanbieter
5 Treffer
-
In: IEEE Electron Device Letters, Jg. 27 (2006-04-01), Heft 4, S. 284-287academicJournalZugriff:
-
In: IEEE Electron Device Letters, Jg. 30 (2009-05-01), Heft 5, S. 541-543academicJournalZugriff:
-
In: IEEE Electron Device Letters, Jg. 29 (2008), Heft 1, S. 125-127academicJournalZugriff:
-
In: IEEE Electron Device Letters, Jg. 26 (2005-11-01), Heft 11, S. 836-838academicJournalZugriff:
-
In: IEEE Electron Device Letters, Jg. 26 (2005-09-01), Heft 9, S. 661-663academicJournalZugriff: