Suchergebnisse
LBZ-Katalog
Aufsätze und mehr
Suchmaske
Suchergebnisse einschränken oder erweitern
Aktive Suchfilter
Weniger Treffer
Art der Quelle
Thema
- silicon 25 Treffer
- metal oxide semiconductor field-effect transistors 24 Treffer
- logic gates 19 Treffer
- silicon-on-insulator technology 15 Treffer
- germanium 12 Treffer
-
45 weitere Werte:
- mosfet 12 Treffer
- complementary metal oxide semiconductors 9 Treffer
- electron mobility 9 Treffer
- equations 9 Treffer
- mathematical model 9 Treffer
- mathematical models 9 Treffer
- mobility 9 Treffer
- mosfets 9 Treffer
- substrates 9 Treffer
- surface roughness 9 Treffer
- threshold voltage 9 Treffer
- ultrathin body (utb) 9 Treffer
- electronics 7 Treffer
- finfets 7 Treffer
- electrostatics 6 Treffer
- silicon-on-insulator (soi) 6 Treffer
- substrates (materials science) 6 Treffer
- variability 6 Treffer
- activation energy 4 Treffer
- business 4 Treffer
- capacitance 4 Treffer
- electronics and electrical industries 4 Treffer
- interface states 4 Treffer
- silicon devices 4 Treffer
- silicon on insulator 4 Treffer
- silicon-on-insulator 4 Treffer
- subthreshold 4 Treffer
- transistors 4 Treffer
- traps 4 Treffer
- aluminum gallium nitride 3 Treffer
- approximation theory 3 Treffer
- back gate 3 Treffer
- chemical vapor deposition 3 Treffer
- crystallinity 3 Treffer
- crystallography 3 Treffer
- data models 3 Treffer
- depletion-mode field-effect transistor (fet) 3 Treffer
- dielectrics 3 Treffer
- dispersion 3 Treffer
- double gate 3 Treffer
- drain-induced barrier lowering (dibl) 3 Treffer
- drift diffusion (dd) 3 Treffer
- effective mass 3 Treffer
- electric capacity 3 Treffer
- electric fields 3 Treffer
Verlag
Inhaltsanbieter
18 Treffer
-
In: IEEE transactions on electron devices, Jg. 69 (2022), Heft 9, S. 4828-4834serialPeriodicalZugriff:
-
In: IEEE transactions on electron devices, Jg. 68 (2021), Heft 2, S. 497-502serialPeriodicalZugriff:
-
In: IEEE TRANSACTIONS ON ELECTRON DEVICES, Jg. 65 (2018), Heft 3, S. 895-900serialPeriodicalZugriff:
-
In: IEEE TRANSACTIONS ON ELECTRON DEVICES, Jg. 64 (2017), Heft 10, S. 3986-3990serialPeriodicalZugriff:
-
In: IEEE Transactions on Electron Devices, Jg. 68 (2021-02-01), Heft 2, S. 497-502Online unknownZugriff:
-
In: IEEE TRANSACTIONS ON ELECTRON DEVICES, Jg. 60 (2013), Heft 4, S. 1485-1489serialPeriodicalZugriff:
-
In: IEEE TRANSACTIONS ON ELECTRON DEVICES, Jg. 59 (2012), Heft 4, S. 941-948serialPeriodicalZugriff:
-
In: IEEE TRANSACTIONS ON ELECTRON DEVICES, Jg. 59 (2012), Heft 1, S. 247-251serialPeriodicalZugriff:
-
In: IEEE TRANSACTIONS ON ELECTRON DEVICES, Jg. 58 (2011), Heft 3, S. 600-608serialPeriodicalZugriff:
-
In: IEEE transactions on electron devices, Jg. 54 (2008), Heft 5, S. 1125-1131serialPeriodicalZugriff:
-
In: IEEE transactions on electron devices, Jg. 55 (2008), Heft 5, S. 1203-1210serialPeriodicalZugriff:
-
In: IEEE TRANSACTIONS ON ELECTRON DEVICES, Jg. 54 (2007), Heft 5, S. 1125-1131serialPeriodicalZugriff:
-
In: IEEE TRANSACTIONS ON ELECTRON DEVICES, Jg. 52 (2005), Heft 11, S. 2430-2439serialPeriodicalZugriff:
-
In: IEEE TRANSACTIONS ON ELECTRON DEVICES, Jg. 52 (2005), Heft 4, S. 561-568serialPeriodicalZugriff:
-
In: IEEE Transactions on Electron Devices, Jg. 55 (2008-05-01), Heft 5, S. 1203-1210academicJournalZugriff:
-
In: IEEE Transactions on Electron Devices, Jg. 52 (2005-04-01), Heft 4, S. 561-568academicJournalZugriff:
-
In: IEEE Transactions on Electron Devices, Jg. 65 (2018-03-01), Heft 3, S. 895-900academicJournalZugriff:
-
In: IEEE Transactions on Electron Devices, Jg. 64 (2017-11-01), Heft 11, S. 4615-4621academicJournalZugriff: