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- silicon 19 Treffer
- silicon-on-insulator technology 16 Treffer
- mosfet 15 Treffer
- logic gates 12 Treffer
- mosfets 11 Treffer
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45 weitere Werte:
- electron mobility 9 Treffer
- metal oxide semiconductors 8 Treffer
- silicon-on-insulator 8 Treffer
- field-effect transistors 7 Treffer
- mathematical models 7 Treffer
- mobility 7 Treffer
- complementary metal oxide semiconductors 6 Treffer
- equations 6 Treffer
- germanium 6 Treffer
- mathematical model 6 Treffer
- substrates 6 Treffer
- surface roughness 6 Treffer
- ultrathin body (utb) 6 Treffer
- compact modeling 5 Treffer
- electrostatics 5 Treffer
- gate array circuits 5 Treffer
- threshold voltage 5 Treffer
- electric currents 4 Treffer
- electric insulators & insulation 4 Treffer
- electronics 4 Treffer
- logic circuits 4 Treffer
- parasitic capacitance 4 Treffer
- poisson's equation 4 Treffer
- short-channel effect (sce) 4 Treffer
- silicon-on-insulator (soi) 4 Treffer
- substrates (materials science) 4 Treffer
- transistors 4 Treffer
- activation energy 3 Treffer
- back gate 3 Treffer
- capacitance 3 Treffer
- crystallinity 3 Treffer
- data models 3 Treffer
- double gate 3 Treffer
- drain-induced barrier lowering (dibl) 3 Treffer
- drift diffusion (dd) 3 Treffer
- effective mass 3 Treffer
- electric capacity 3 Treffer
- electric fields 3 Treffer
- electronic band structure 3 Treffer
- energy function 3 Treffer
- energy-band theory of solids 3 Treffer
- etching 3 Treffer
- exciton theory 3 Treffer
- finfets 3 Treffer
- gate leakage 3 Treffer
Verlag
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Inhaltsanbieter
46 Treffer
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Effects of sidewall spacer layers on thermal and low frequency noise performance of SOI UTB MOSFETs.In: Microsystem Technologies, Jg. 28 (2022-03-01), Heft 3, S. 653-658Online academicJournalZugriff:
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In: IEEE Transactions on Electron Devices, Jg. 68 (2021-02-01), Heft 2, S. 497-502academicJournalZugriff:
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In: IEEE Transactions on Electron Devices, Jg. 65 (2018-03-01), Heft 3, S. 895-900academicJournalZugriff:
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In: IEEE Transactions on Electron Devices, Jg. 64 (2017-11-01), Heft 11, S. 4615-4621academicJournalZugriff:
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In: IEEE Transactions on Electron Devices, Jg. 64 (2017-10-01), Heft 10, S. 3986-3990academicJournalZugriff:
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In: Superlattices & Microstructures, Jg. 101 (2017), S. 362-372Online academicJournal
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In: Materials Science in Semiconductor Processing, Jg. 31 (2015-03-01), S. 175-183Online academicJournal
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In: Superlattices & Microstructures, Jg. 75 (2014-11-01), S. 118-126Online academicJournal
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In: Solid-State Electronics, Jg. 99 (2014-09-01), S. 65-77Online academicJournal
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In: Solid-State Electronics, Jg. 95 (2014-05-01), S. 52-60Online academicJournal
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In: Solid-State Electronics, Jg. 91 (2014), S. 28-35Online academicJournal
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In: IEEE Transactions on Electron Devices, Jg. 59 (2012), Heft 1, S. 247-251academicJournalZugriff:
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In: IEEE Transactions on Electron Devices, Jg. 58 (2011-03-01), Heft 3, S. 600-608academicJournalZugriff:
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In: Solid-State Electronics, Jg. 57 (2011-03-01), Heft 1, S. 61-66Online academicJournal
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In: Solid-State Electronics, Jg. 54 (2010-05-01), Heft 5, S. 545-551Online academicJournal
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In: Solid-State Electronics, Jg. 53 (2009-05-01), Heft 5, S. 540-547Online academicJournal
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In: Solid-State Electronics, Jg. 52 (2008-12-01), Heft 12, S. 1867-1871Online academicJournal
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In: Molecular Simulation, Jg. 34 (2008), Heft 1, S. 63-72academicJournalZugriff:
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In: IEEE Transactions on Electron Devices, Jg. 54 (2007-05-01), Heft 5, S. 1125-1131academicJournalZugriff:
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In: Solid-State Electronics, Jg. 51 (2007-04-01), Heft 4, S. 611-616Online academicJournal