HAD fabricated on UTB AlGaN/GaN heterostructure for high-sensitivity zero-bias microwave detection.
In: Electronics Letters (Wiley-Blackwell), Jg. 55 (2019-11-28), Heft 24, S. 1303-1304
Online
academicJournal
Zugriff:
A novel technology based on aluminium gallium nitride (AlGaN)/GaN hybrid-anode diode (HAD) for precise modulation of turn-on voltage is proposed and experimentally demonstrated. By delicately tailoring the as-grown barrier thickness, the turn-on voltage of the HAD and yet the non-linearity at zero bias (i.e. 0 V) for efficient microwave detection can be flexibly modulated. An AlGaN/GaN ultra-thin-barrier HAD (UTB-HAD) was designed and fabricated for zero-bias microwave detection. The AlGaN-barrier thickness was optimised to be 5 nm by TCAD simulation, which yields a strong non-linearity at zero bias featuring a high-curvature coefficient (γ) of 27V-1 in the fabricated UTB-HAD. The first-order voltage sensitivity βv is projected to be as high as 2.7 mV/µW. The proposed approach of precise sensitivity modulation is of great interests for high-efficient zero-bias microwave detection applications. [ABSTRACT FROM AUTHOR]
Titel: |
HAD fabricated on UTB AlGaN/GaN heterostructure for high-sensitivity zero-bias microwave detection.
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Autor/in / Beteiligte Person: | Yun, Yu ; Xiong, Wei ; Shi, Yu ; Chen, Kuangli ; Zhou, Qi |
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Zeitschrift: | Electronics Letters (Wiley-Blackwell), Jg. 55 (2019-11-28), Heft 24, S. 1303-1304 |
Veröffentlichung: | 2019 |
Medientyp: | academicJournal |
ISSN: | 0013-5194 (print) |
DOI: | 10.1049/el.2019.2548 |
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