A rigorous carrier-based analytic model for undoped ultra-thin-body silicon-on-insulator (UTB-SOI) MOSFETs.
In: Molecular Simulation, Jg. 34 (2008), Heft 1, S. 63-72
academicJournal
Zugriff:
This paper, presents a rigorous carrier-based analytic model for the long channel undoped (lightly doped) ultra-thin-body silicon-on-insulator (UTB-SOI) MOSFETs. It is based on the exact solution of the Poisson-Boltzamann equation coupled to the current continuity equation with the back interface oxide layer effect. The developed model is continuous and valid for all UTB-SOI MOSFET operation regions (linear, saturation, sub-threshold and strong inversion region) and traces the transition between different regions. This preliminary model has been verified by comparing with long channel results generated by 2D simulator. The predicted I-V characteristics also show in a good agreement with 2D numerical simulations for all ranges of gate and drain voltages, proving the validity of the analytical model. All these indicate that this model will be an ideal core model for UTB MOSFET compact modelling if the appropriate second-effects such as quantum mechanical effect, doping profile effect, short-channel effects and poly-depletion effect are integrated into it. [ABSTRACT FROM AUTHOR]
| Titel: |
A rigorous carrier-based analytic model for undoped ultra-thin-body silicon-on-insulator (UTB-SOI) MOSFETs.
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| Autor/in / Beteiligte Person: | He, J. ; Bian, W. ; Chen, Y. ; Wei, Y. ; Zhang, L. ; Zhang, J. ; Chan, M. |
| Zeitschrift: | Molecular Simulation, Jg. 34 (2008), Heft 1, S. 63-72 |
| Veröffentlichung: | 2008 |
| Medientyp: | academicJournal |
| ISSN: | 0892-7022 (print) |
| DOI: | 10.1080/08927020701730393 |
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