Parameter modeling for higher-order transport models in UTB SOI MOSFETs.
In: Journal of Computational Electronics, Jg. 7 (2008-09-01), Heft 3, S. 168-171
Online
academicJournal
Zugriff:
We present a two-dimensional tabularized higher-order transport model based on extracted parameters from a Subband Monte Carlo (SMC) simulator. Important effects like quantum confinement and surface roughness scattering are automatically taken into account. Device parameters like the electron temperature or the output characteristic of a SOI MOSFET are compared with the results obtained from models using bulk Monte Carlo (MC) data, where no quantization effects and no surface roughness scattering are considered. [ABSTRACT FROM AUTHOR]
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Titel: |
Parameter modeling for higher-order transport models in UTB SOI MOSFETs.
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Autor/in / Beteiligte Person: | Vasicek, Martin ; Cervenka, Johann ; Wagner, Martin ; Karner, Markus ; Grasser, Tibor |
Link: | |
Zeitschrift: | Journal of Computational Electronics, Jg. 7 (2008-09-01), Heft 3, S. 168-171 |
Veröffentlichung: | 2008 |
Medientyp: | academicJournal |
ISSN: | 1569-8025 (print) |
DOI: | 10.1007/s10825-008-0239-x |
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