(Invited) High Performance UTB GeOI n and pMOSFETs Featuring HEtero-Layer-Lift-Off (HELLO) Technology
In: ECS Transactions, Jg. 86 (2018-07-23), Heft 10, S. 25-34
serialPeriodical
Zugriff:
Advanced HEtero-Layer-Lift-Off (HELLO) technology utilizing Ge/SiGe/Ge hetero-epitaxy technique was implemented to realize high quality ultrathin body (UTB) Ge-on-insulator (GeOI) structures. Top interfacial quality of GeOI has been taken care by plasma enhanced ALD-Al2O3 passivation. On the other hand, bottom interfacial quality of GeOI was improved by N2O plasma treatment or Si passivation for UTB GeOI n and pMOSFETs, respectively. Besides, GeOI body thickness (Tbody) was precisely controlled through SiGe etch stop layer and digital etching process. For lowering parasitic resistance of S/D regions of bulk Ge n and pMOSFETs, ion implantation after germanidation (IAG) has been demonstrated as an effective way. Moreover, high performance UTB GeOI n and pMOSFETs with Tbody less than 5 nm have been successfully fabricated for the first time. Thickness dependence of carrier mobility of GeOI has also been investigated systematically through split-CV method, revealing a great potential of UTB GeOI structures in future Ge CMOS application.
Titel: |
(Invited) High Performance UTB GeOI n and pMOSFETs Featuring HEtero-Layer-Lift-Off (HELLO) Technology
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Autor/in / Beteiligte Person: | Hsin, Wen ; Irisawa, Toshifumi ; Ishii, Hiroyuki ; Hattori, Hiroyuki ; Ota, Hiroyuki ; Takagi, Hideki ; Kurashima, Yuichi ; Uchida, Noriyuki ; Maeda, Tatsuro |
Zeitschrift: | ECS Transactions, Jg. 86 (2018-07-23), Heft 10, S. 25-34 |
Veröffentlichung: | 2018 |
Medientyp: | serialPeriodical |
ISSN: | 1938-5862 (print) ; 1938-6737 (print) |
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