Hole Mobility Enhancement in (100)- and (110)-surface of Ultrathin-body(UTB) Silicon-on-insulator(SOI) Metal Oxide Semiconductors Field Effect Transistor
In: Journal of the Korean Institute of Electrical and Electronic Material Engineers, Jg. 20 (2007-11-01), S. 939-942
Online
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Zugriff:
We investigated the characteristics of UTB-SOI pMOSFETs with SOI thickness() ranging from 10 nm to 1 nm and evaluated the dependence of electrical characteristics on the silicon surface orientation. As a result, it is found that the subthreshold characteristics of (100)-surface UTB-SOI pMOSFETs were superior to (110)-surface. However, the hole mobility of (110)-surface were larger than that of (100)-surface. Especially, the enhancement of effective hole mobility at the effective field of 0.1 MV/cm was observed from 3-nm to 5-nm SOI thickness range.
| Titel: |
Hole Mobility Enhancement in (100)- and (110)-surface of Ultrathin-body(UTB) Silicon-on-insulator(SOI) Metal Oxide Semiconductors Field Effect Transistor
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| Autor/in / Beteiligte Person: | Cho, Won-Ju ; Kim, Kwan-Su |
| Link: | |
| Zeitschrift: | Journal of the Korean Institute of Electrical and Electronic Material Engineers, Jg. 20 (2007-11-01), S. 939-942 |
| Veröffentlichung: | The Korean Institute of Electrical and Electronic Material Engineers, 2007 |
| Medientyp: | unknown |
| ISSN: | 1226-7945 (print) |
| DOI: | 10.4313/jkem.2007.20.11.939 |
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