Optimal UTB FD/SOI device structure using thin BOX for sub-50-nm SRAM design
In: IEEE Electron Device Letters, Jg. 27 (2006-04-01), S. 284-287
Online
unknown
Zugriff:
In this letter, the random dopant fluctuation effect in ultrathin-body (UTB) fully depleted/silicon-on-insulator (FD/SOI) devices is analyzed. We show that due to larger variability and asymmetry in threshold voltage V/sub t/ distribution, it will be difficult to use UTB FD/SOI devices for sub-50-nm static random access memory (SRAM) design. Using thinner buried oxide (BOX) FD/SOI devices, the asymmetry in the V/sub t/ spread can be reduced. We present a viable concept of FD/SOI SRAM and predict that a thin-BOX device is the optimal FD/SOI structure for SRAM in sub-50-nm technology nodes.
Titel: |
Optimal UTB FD/SOI device structure using thin BOX for sub-50-nm SRAM design
|
---|---|
Autor/in / Beteiligte Person: | Wang, Xinlin ; Oldiges, P. ; Mukhopadhyay, Saibal ; Roy, Kaushik ; Kim, Keunwoo ; Frank, David J. ; Chuang, Ching-Te |
Link: | |
Zeitschrift: | IEEE Electron Device Letters, Jg. 27 (2006-04-01), S. 284-287 |
Veröffentlichung: | Institute of Electrical and Electronics Engineers (IEEE), 2006 |
Medientyp: | unknown |
ISSN: | 0741-3106 (print) |
DOI: | 10.1109/led.2006.871540 |
Schlagwort: |
|
Sonstiges: |
|