(Invited) High Performance UTB GeOI n and pMOSFETs Featuring HEtero-Layer-Lift-Off (HELLO) Technology
In: ECS Transactions, Jg. 86 (2018-07-23), S. 25-34
Online
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(Invited) High Performance UTB GeOI n and pMOSFETs Featuring HEtero-Layer-Lift-Off (HELLO) Technology
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Autor/in / Beteiligte Person: | Hattori, Hiroyuki ; Kurashima, Yuichi ; Ishii, Hiroyuki ; Irisawa, Toshifumi ; Takagi, Hideki ; Maeda, Tatsuro ; Ota, Hiroyuki ; Uchida, Noriyuki ; Wen Hsin Chang |
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Zeitschrift: | ECS Transactions, Jg. 86 (2018-07-23), S. 25-34 |
Veröffentlichung: | The Electrochemical Society, 2018 |
Medientyp: | unknown |
ISSN: | 1938-5862 (print) ; 1938-6737 (print) |
DOI: | 10.1149/08610.0025ecst |
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