(Invited) FinFET and UTB--How to Make Very Short Channel MOSFETs
In: ECS Transactions, Jg. 50 (2013-03-15), S. 17-20
Online
unknown
Zugriff:
New materials with enhanced mobility are clearly going to be important to the IC industry. In addition, the leakage current in future short gate transistors must be suppressed somehow. FinFET was developed for this goal. Its fin shape or its 3D nature is not the reason for its ability to suppress the leakage current. A 2D planar short gate structure, Ultra-Thin-Body (UTB), was proposed and demonstrated at the same time as FinFET. Together they illustrate a new scaling principle. Future monolayer semiconductor transistors are naturally UTB and highly scalable.
| Titel: |
(Invited) FinFET and UTB--How to Make Very Short Channel MOSFETs
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| Autor/in / Beteiligte Person: | Hu, Chenming |
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| Zeitschrift: | ECS Transactions, Jg. 50 (2013-03-15), S. 17-20 |
| Veröffentlichung: | The Electrochemical Society, 2013 |
| Medientyp: | unknown |
| ISSN: | 1938-6737 (print) ; 1938-5862 (print) |
| DOI: | 10.1149/05009.0017ecst |
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