Switching Time Analysis of Negative Capacitance UTB GeOI MOSFETs
In: Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials, 2017-09-21
Online
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Zugriff:
Titel: |
Switching Time Analysis of Negative Capacitance UTB GeOI MOSFETs
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Autor/in / Beteiligte Person: | Chiu, P.-C. ; Hu, V.P.-H. |
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Zeitschrift: | Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials, 2017-09-21 |
Veröffentlichung: | The Japan Society of Applied Physics, 2017 |
Medientyp: | unknown |
DOI: | 10.7567/ssdm.2017.ps-3-03 |
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