HEtero-layer-lift-off (HELLO) technology for enhanced hole mobility in UTB GeOI pMOSFETs
In: 2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2018-04-01
Online
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Zugriff:
Ultra-thin-body (UTB) germanium-on-insulator (GeOI) substrates have been fabricated utilizing advanced HEtero- Layer-Lift-Off (HELLO) technology. HELLO technology is effective in mitigating thickness fluctuation issue in UTB GeOI during Ge thinning process. As a result, well-known hole mobility degradation while scaling body thickness (t body ) in UTB GeOI pMOSFETs has been suppressed. The mechanism of enhanced hole mobility in UTB GeOI pMOSFETs was also investigated through low temperature electrical measurement. The hole mobility in 9-nm-thick GeOI devices fabricated with HELLO technology showed larger temperature dependence, indicating the release of thickness fluctuation scattering.
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HEtero-layer-lift-off (HELLO) technology for enhanced hole mobility in UTB GeOI pMOSFETs
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Autor/in / Beteiligte Person: | Ishii, Hiroyuki ; Wen Hsin Chang ; Uchida, Noriyuki ; Irisawa, Toshifumi ; Hattori, Hiroyuki ; Maeda, Tatsuro |
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Zeitschrift: | 2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2018-04-01 |
Veröffentlichung: | IEEE, 2018 |
Medientyp: | unknown |
DOI: | 10.1109/vlsi-tsa.2018.8403822 |
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