Characteristic Variations Induced by Random Fluctuation of Source/Drain Lateral Distribution Dopant in Nano-Scale UTB SOI MOSFET
In: ECS Transactions, Jg. 18 (2009-03-06), S. 77-81
Online
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Zugriff:
The "nominally" un-doped or lightly-doped channels are actually doped considerably due to the lateral distribution of dopants from Source/Drain (S/D) doping, thus forming a new source of Random Dopant Fluctuation (RDF). In this work, the unexpected RDF effect of sub-20nm UTB SOI MOSFETs is investigated by device simulation. A new method to simulate the RDF effect was introduced. The results show that a severe Vth variation due to the new RDF effect will take place when device is scaled into sub-20 nm regime, even with un-doped channel. The device parameter dependence of Vth variations of MOSFETs with un-doped channel were presented, which was found to be largely similar to that of ones with doped channel. The drain current and subthreshold fluctuations were also investigated to gain a more comprehensive insight to RDF in MOSFETs. Our results illustrated the importance of suppressing the lateral distribution of S/D dopants for scaled devices.
Titel: |
Characteristic Variations Induced by Random Fluctuation of Source/Drain Lateral Distribution Dopant in Nano-Scale UTB SOI MOSFET
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Autor/in / Beteiligte Person: | Deng, Hui ; Zhang, Shengdong ; Han, Ruqi ; Du, Gang ; Du, Linfeng |
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Zeitschrift: | ECS Transactions, Jg. 18 (2009-03-06), S. 77-81 |
Veröffentlichung: | The Electrochemical Society, 2009 |
Medientyp: | unknown |
ISSN: | 1938-6737 (print) ; 1938-5862 (print) |
DOI: | 10.1149/1.3096431 |
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