Carrier Mobility/Transport in Undoped-UTB DG FinFETs
In: IEEE Transactions on Electron Devices, Jg. 54 (2007-05-01), S. 1125-1131
Online
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Zugriff:
A process/physics-based double-gate (DG) MOSFET model (UFDG), which includes a quantum-based carrier mobility model, is used to examine carrier transport in undoped ultrathin-silicon bodies/channels. The model predicts for {100}-surface devices, in accord with measurements, effective electron and hole mobilities that are dramatically higher than those in contemporary bulk-Si MOSFETs at the same integrated inversion-carrier density. Calibration of UFDG to undoped p- and n-channel DG FinFETs yields consistent results, showing very high mobilities in contemporary FinFETs, implying relatively smooth {110} fin-sidewall surfaces, and giving new insights on electron and hole mobilities in DG MOSFETs with {110} versus {100} surfaces. The calibrated model is used to simulate 17.5-nm DG FinFETs with midgap gates, predicting ballistic-like currents and, hence, suggesting that strained-Si channels are not needed for mobility enhancement in these nonclassical devices
| Titel: |
Carrier Mobility/Transport in Undoped-UTB DG FinFETs
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| Autor/in / Beteiligte Person: | Fossum, Jerry G. ; Trivedi, Vishal P. ; Chowdhury, M.M. ; Mathew, Leo |
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| Zeitschrift: | IEEE Transactions on Electron Devices, Jg. 54 (2007-05-01), S. 1125-1131 |
| Veröffentlichung: | Institute of Electrical and Electronics Engineers (IEEE), 2007 |
| Medientyp: | unknown |
| ISSN: | 0018-9383 (print) |
| DOI: | 10.1109/ted.2007.893669 |
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