Parameter modeling for higher-order transport models in UTB SOI MOSFETs
In: Journal of Computational Electronics, Jg. 7 (2008-03-08), S. 168-171
Online
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Zugriff:
We present a two-dimensional tabularized higher-order transport model based on extracted parameters from a Subband Monte Carlo (SMC) simulator. Important effects like quantum confinement and surface roughness scattering are automatically taken into account. Device parameters like the electron temperature or the output characteristic of a SOI MOSFET are compared with the results obtained from models using bulk Monte Carlo (MC) data, where no quantization effects and no surface roughness scattering are considered.
Titel: |
Parameter modeling for higher-order transport models in UTB SOI MOSFETs
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Autor/in / Beteiligte Person: | Cervenka, Johann ; Grasser, Tibor ; Karner, Markus ; Wagner, Martin ; Vasicek, M. |
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Zeitschrift: | Journal of Computational Electronics, Jg. 7 (2008-03-08), S. 168-171 |
Veröffentlichung: | Springer Science and Business Media LLC, 2008 |
Medientyp: | unknown |
ISSN: | 1572-8137 (print) ; 1569-8025 (print) |
DOI: | 10.1007/s10825-008-0239-x |
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