Electron subband structure in strained silicon UTB films from the Hensel-Hasegawa-Nakayama model - Part 1 analytical consideration and strain-induced valley splitting
In: Solid-State Electronics, 2010
Online
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Zugriff:
Multi-gate FinFETs and ultra-thin silicon body SOI FETs are considered as perfect candidates for future technology nodes. Strong size quantization leads to a formation of quasi-two-dimensional subbands in carrier systems within thin silicon films. The employed Hensel–Hasegawa–Nakayama k · p Hamiltonian accurately describes the bulk structure up to the energies of 0.5–0.8 eV and includes a shear strain component. Shear strain is responsible for effective mass modification and is therefore an important source of the electron mobility enhancement in ultra-thin silicon films. The influence of shear strain on the subband structure in thin silicon films is investigated.
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Electron subband structure in strained silicon UTB films from the Hensel-Hasegawa-Nakayama model - Part 1 analytical consideration and strain-induced valley splitting
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Autor/in / Beteiligte Person: | Baumgartner, Oskar ; Selberherr, Siegfried ; Windbacher, Thomas ; Sverdlov, Viktor |
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Zeitschrift: | Solid-State Electronics, 2010 |
Veröffentlichung: | 2010 |
Medientyp: | unknown |
ISSN: | 0038-1101 (print) |
DOI: | 10.1016/j.sse.2009.12.008 |
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