The Modulation Effect of LPCVD-Si x N y Stoichiometry on 2-DEG Characteristic of UTB AlGaN/GaN Heterostructure
In: IEEE Transactions on Electron Devices, Jg. 69 (2022), Heft 9, S. 4828-4834
Online
academicJournal
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The Modulation Effect of LPCVD-Si x N y Stoichiometry on 2-DEG Characteristic of UTB AlGaN/GaN Heterostructure
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Autor/in / Beteiligte Person: | Zhu, Liyang ; Zhou, Qi ; Chen, Kuangli ; Gao, Wei ; Cai, Yong ; Cheng, Kai ; Li, Zhaoji ; Zhang, Bo ; National Key Research and Development Program of China ; National Natural Science Foundation of China ; Sichuan Science and Technology Program ; GuangdongBasic andAppliedBasic Research Foundation, China |
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Zeitschrift: | IEEE Transactions on Electron Devices, Jg. 69 (2022), Heft 9, S. 4828-4834 |
Veröffentlichung: | Institute of Electrical and Electronics Engineers (IEEE), 2022 |
Medientyp: | academicJournal |
ISSN: | 0018-9383 |
DOI: | 10.1109/ted.2022.3188609 |
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