Correlation of Radiation-Induced Interface Traps With Band Edge Energy Through Band Structure-Based Analysis of Electrostatics of UTB SOI Devices
In: IEEE Transactions on Device and Materials Reliability ; page 1-1 ; ISSN 1530-4388 1558-2574, 2024
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Correlation of Radiation-Induced Interface Traps With Band Edge Energy Through Band Structure-Based Analysis of Electrostatics of UTB SOI Devices
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Autor/in / Beteiligte Person: | Mishra, Nalin Vilochan ; Medury, Aditya Sankar ; Science and Engineering Research Board |
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Zeitschrift: | IEEE Transactions on Device and Materials Reliability ; page 1-1 ; ISSN 1530-4388 1558-2574, 2024 |
Veröffentlichung: | Institute of Electrical and Electronics Engineers (IEEE), 2024 |
Medientyp: | academicJournal |
DOI: | 10.1109/tdmr.2024.3366592 |
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