Sub-25nm UTB SOI SRAM cell under the influence of discrete random dopants : European solid-state device research conference; Papers selected from the 35th European solid-state device research conference: ESSDERC '05
In: SOLID STATE ELECTRONICS 50(NO 4):660-667; Jg. 50 (2006) NO 4, S. 660-667
Online
Konferenz
Titel: |
Sub-25nm UTB SOI SRAM cell under the influence of discrete random dopants : European solid-state device research conference; Papers selected from the 35th European solid-state device research conference: ESSDERC '05
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Autor/in / Beteiligte Person: | Samsudin, K. ; Cheng, B. ; Brown, A. R. ; Roy, S. ; Asenov, A. |
Link: | |
Quelle: | SOLID STATE ELECTRONICS 50(NO 4):660-667; Jg. 50 (2006) NO 4, S. 660-667 |
Veröffentlichung: | 2006 |
Medientyp: | Konferenz |
ISSN: | 0038-1101 (print) |
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