Combined sources of intrinsic parameter fluctuations in sub-25nm generation UTB-SOI MOSFETs: A statistical simulation study : Ultimate Integration of Silicon; Papers selected from the 2006 ULIS conference
In: SOLID STATE ELECTRONICS 51(4):611-616; Jg. 51 (2007) 4, S. 611-616
Online
Konferenz
Titel: |
Combined sources of intrinsic parameter fluctuations in sub-25nm generation UTB-SOI MOSFETs: A statistical simulation study : Ultimate Integration of Silicon; Papers selected from the 2006 ULIS conference
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Autor/in / Beteiligte Person: | Samsudin, K. ; Adamu-Lema, F. ; Brown, A. R. ; Roy, S. ; Asenov, A. |
Link: | |
Quelle: | SOLID STATE ELECTRONICS 51(4):611-616; Jg. 51 (2007) 4, S. 611-616 |
Veröffentlichung: | 2007 |
Medientyp: | Konferenz |
ISSN: | 0038-1101 (print) |
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