A Novel Nanoscaled Device Concept: Quasi-SOI MOSFET to Eliminate the Potential Weaknesses of UTB SOI MOSFET
In: IEEE TRANSACTIONS ON ELECTRON DEVICES, Jg. 52 (2005), Heft 4, S. 561-568
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Zugriff:
Titel: |
A Novel Nanoscaled Device Concept: Quasi-SOI MOSFET to Eliminate the Potential Weaknesses of UTB SOI MOSFET
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Autor/in / Beteiligte Person: | Tian, Y. ; Huang, R. ; Zhang, X. ; Wang, Y. |
Link: | |
Zeitschrift: | IEEE TRANSACTIONS ON ELECTRON DEVICES, Jg. 52 (2005), Heft 4, S. 561-568 |
Veröffentlichung: | 2005 |
Medientyp: | serialPeriodical |
ISSN: | 0018-9383 (print) |
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