Modeling Study of the Impact of Surface Roughness on Silicon and Germanium UTB MOSFETs
In: IEEE TRANSACTIONS ON ELECTRON DEVICES, Jg. 52 (2005), Heft 11, S. 2430-2439
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Zugriff:
Titel: |
Modeling Study of the Impact of Surface Roughness on Silicon and Germanium UTB MOSFETs
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Autor/in / Beteiligte Person: | Low, T. ; Li, M. F. ; Samudra, G. ; Yeo, Y. C. ; Zhu, C. ; Chin, A. ; Kwong, D. L. |
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Zeitschrift: | IEEE TRANSACTIONS ON ELECTRON DEVICES, Jg. 52 (2005), Heft 11, S. 2430-2439 |
Veröffentlichung: | 2005 |
Medientyp: | serialPeriodical |
ISSN: | 0018-9383 (print) |
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