Fully Depleted UTB and Trigate N-Channel MOSFETs Featuring Low-Temperature PtSi Schottky-Barrier Contacts With Dopant Segregation
In: IEEE ELECTRON DEVICE LETTERS, Jg. 30 (2009), Heft 5, S. 541-543
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Zugriff:
Titel: |
Fully Depleted UTB and Trigate N-Channel MOSFETs Featuring Low-Temperature PtSi Schottky-Barrier Contacts With Dopant Segregation
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Autor/in / Beteiligte Person: | Gudmundsson, V. ; Hellstrom, P. E. ; Luo, J. ; Lu, J. ; Zhang, S. L. ; Ostling, M. |
Link: | |
Zeitschrift: | IEEE ELECTRON DEVICE LETTERS, Jg. 30 (2009), Heft 5, S. 541-543 |
Veröffentlichung: | 2009 |
Medientyp: | serialPeriodical |
ISSN: | 0741-3106 (print) |
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