Electron subband structure in strained silicon UTB films from the Hensel-Hasegawa-Nakayama model - Part 2 efficient self-consistent numerical solution of the kp schrodinger equation
In: SOLID STATE ELECTRONICS, Jg. 54 (2010), Heft 2, S. 143-148
Online
serialPeriodical
Titel: |
Electron subband structure in strained silicon UTB films from the Hensel-Hasegawa-Nakayama model - Part 2 efficient self-consistent numerical solution of the kp schrodinger equation
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Autor/in / Beteiligte Person: | Baumgartner, O. ; Karner, M. ; Sverdlov, V. ; Kosina, H. |
Link: | |
Zeitschrift: | SOLID STATE ELECTRONICS, Jg. 54 (2010), Heft 2, S. 143-148 |
Veröffentlichung: | 2010 |
Medientyp: | serialPeriodical |
ISSN: | 0038-1101 (print) |
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