A physical compact DC drain current model for long-channel undoped ultra-thin body (UTB) SOI and asymmetric double-gate (DG) MOSFETs with independent gate operation
In: SOLID STATE ELECTRONICS, Jg. 57 (2011), Heft 1, S. 61-66
Online
serialPeriodical
Titel: |
A physical compact DC drain current model for long-channel undoped ultra-thin body (UTB) SOI and asymmetric double-gate (DG) MOSFETs with independent gate operation
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Autor/in / Beteiligte Person: | Lime, F. ; Ritzenthaler, R. ; Ricoma, M. ; Martinez, F. ; Pascal, F. ; Miranda, E. ; Faynot, O. ; Iniguez, B. |
Link: | |
Zeitschrift: | SOLID STATE ELECTRONICS, Jg. 57 (2011), Heft 1, S. 61-66 |
Veröffentlichung: | 2011 |
Medientyp: | serialPeriodical |
ISSN: | 0038-1101 (print) |
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