Modeling of Back-Gate Effects on Gate-Induced Drain Leakage and Gate Currents in UTB SOI MOSFETs
In: IEEE TRANSACTIONS ON ELECTRON DEVICES, Jg. 64 (2017), Heft 10, S. 3986-3990
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Zugriff:
Titel: |
Modeling of Back-Gate Effects on Gate-Induced Drain Leakage and Gate Currents in UTB SOI MOSFETs
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Autor/in / Beteiligte Person: | Lin, Y. ; Kushwaha, P. ; Agarwal, H. ; Chang, H. ; Duarte, J. P. ; Sachid, A. B. ; Khandelwal, S. ; Salahuddin, S. ; Hu, C. |
Link: | |
Zeitschrift: | IEEE TRANSACTIONS ON ELECTRON DEVICES, Jg. 64 (2017), Heft 10, S. 3986-3990 |
Veröffentlichung: | 2017 |
Medientyp: | serialPeriodical |
ISSN: | 0018-9383 (print) |
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