Back-Gate Modulation in UTB GeOI pMOSFETs With Advanced Substrate Fabrication Technique
In: IEEE TRANSACTIONS ON ELECTRON DEVICES, Jg. 65 (2018), Heft 3, S. 895-900
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Zugriff:
Titel: |
Back-Gate Modulation in UTB GeOI pMOSFETs With Advanced Substrate Fabrication Technique
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Autor/in / Beteiligte Person: | Zheng, Z. ; Yu, X. ; Zhang, Y. ; Xie, M. ; Cheng, R. ; Zhao, Y. |
Link: | |
Zeitschrift: | IEEE TRANSACTIONS ON ELECTRON DEVICES, Jg. 65 (2018), Heft 3, S. 895-900 |
Veröffentlichung: | 2018 |
Medientyp: | serialPeriodical |
ISSN: | 0018-9383 (print) |
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