An Analytical Model for the Gate C–V Characteristics of UTB III—V-on-Insulator MIS Structure
In: IEEE journal of the Electron Devices Society, Jg. 5 (2017), Heft 5, S. 335-339
serialPeriodical
Zugriff:
Titel: |
An Analytical Model for the Gate C–V Characteristics of UTB III—V-on-Insulator MIS Structure
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Autor/in / Beteiligte Person: | Islam, Muhammad Mainul ; Kutubul Alam, Md Nur ; Sarker, Md Shamim ; Islam, Md Rafiqul ; Haque, Anisul |
Link: | |
Zeitschrift: | IEEE journal of the Electron Devices Society, Jg. 5 (2017), Heft 5, S. 335-339 |
Veröffentlichung: | 2017 |
Medientyp: | serialPeriodical |
ISSN: | 2168-6734 (print) |
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