The Modulation Effect of LPCVD-Si<subscript> x </subscript>N<subscript> y </subscript> Stoichiometry on 2-DEG Characteristic of UTB AlGaN/GaN Heterostructure
In: IEEE transactions on electron devices, Jg. 69 (2022), Heft 9, S. 4828-4834
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Titel: |
The Modulation Effect of LPCVD-Si<subscript> x </subscript>N<subscript> y </subscript> Stoichiometry on 2-DEG Characteristic of UTB AlGaN/GaN Heterostructure
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Autor/in / Beteiligte Person: | Zhu, Liyang ; Zhou, Qi ; Chen, Kuangli ; Gao, Wei ; Cai, Yong ; Cheng, Kai ; Li, Zhaoji ; Zhang, Bo |
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Zeitschrift: | IEEE transactions on electron devices, Jg. 69 (2022), Heft 9, S. 4828-4834 |
Veröffentlichung: | 2022 |
Medientyp: | serialPeriodical |
ISSN: | 0018-9383 (print) |
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