Effect of growth-induced linear defects on high frequency properties of pulse-laser deposited YBa2Cu3O7-δ films
In: International Symposium on High Temperature Superconductors in High Frequency FieldsJournal of superconductivity 14(1):105-114; Jg. 14 (2001) 1, S. 105-114
Konferenz
- print, 39 ref
Zugriff:
Growth-induced linear defects are shown to strongly affect the microwave surface resistance, Rs, of highly biaxially oriented high temperature superconductor (HTS) YBa2Cu3O7-δ (YBCO) films. Measured R,(77 K) turned out to be 4-5 times higher than in single crystals. The films were deposited by modified pulse-laser technique, Ic(77 K) = (3 - 6) x 106 A/cm2, onto LaAlO3substrates, Rs(T) was measured at 134 GHz and 20-100 K. TEM/HREM study of YBCO films deposited at Ts = 750°C-780°C revealed a reduction of edge dislocation density with Ts increase (from 2.1011 to 1010 lines/cm2). YBCO films deposited at Ts = 780°C exhibited the smallest Rs(77 K, 134 GHz) < 120 mΩ and the lowest density of dislocations detected by HREM and X-ray analysis. A nature of the dislocation effect is discussed within a model of local anisotropic elastic deformation in a vicinity of dislocation cores, where Tc variation and an enhancement of normal quasiparticle density are significant.
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Effect of growth-induced linear defects on high frequency properties of pulse-laser deposited YBa2Cu3O7-δ films
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Autor/in / Beteiligte Person: | PAN, V. M ; FLIS, V. S ; ZANDBERGEN, H. W ; KARASEVSKA, O. P ; MATSUI, V. I ; PESHKO, I. I ; SVETCHNIKOV, V. L ; LORENZ, M ; IVANYUTA, A. N ; MELKOV, G. A ; PASHITSKII, E. A |
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Quelle: | International Symposium on High Temperature Superconductors in High Frequency FieldsJournal of superconductivity 14(1):105-114; Jg. 14 (2001) 1, S. 105-114 |
Veröffentlichung: | New York, NY: Kluwer/Plenum, 2001 |
Medientyp: | Konferenz |
Umfang: | print, 39 ref |
ISSN: | 0896-1107 (print) |
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