Structure and phase composition of sputter deposits from a C60 target bombarded by argon and xenon ions
In: Proceedings of the International Conference on Modification of Properties of Surface Layers of Non-Semiconducting Materials using Particle Beams 2001 (MPSL 2001), 27-30 August 2001, Feodosiya, UkraineVacuum 68(3):251-256; Jg. 68 (2002) 3, S. 251-256
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The structural and morphological features of films deposited by sputtering C60 target with argon or xenon ions at 30° to a surface have been studied by the TEM. The energy of ions was varied from several hundreds of eV up to several keV. Films deposited with high-energy sputtering ions (several keV) have amorphous single-phase structure while at ion energies up to 1 keV particles of a second phase appear. This second phase is also amorphous but its properties differ from the original amorphous phase, which serves as a matrix. In situ heating a film in an electron microscope has resulted in evaporation of these particles and appearance in their place of deep crater-shaped structures. The contrast of the matrix does not vary afterward. The quantity and the size of particles of the volatile phase increases when the energy of ions decreases. Both the relationship between processes taking place on the target during sputtering and structural features of the film are shown.
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Structure and phase composition of sputter deposits from a C60 target bombarded by argon and xenon ions
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Autor/in / Beteiligte Person: | DUDKIN, V. A ; PUKHA, V. E ; VUS, A. S ; STETSENKO, A. N ; SAVITSKY, B. A ; VOVK, O. M |
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Quelle: | Proceedings of the International Conference on Modification of Properties of Surface Layers of Non-Semiconducting Materials using Particle Beams 2001 (MPSL 2001), 27-30 August 2001, Feodosiya, UkraineVacuum 68(3):251-256; Jg. 68 (2002) 3, S. 251-256 |
Veröffentlichung: | Oxford: Elsevier, 2002 |
Medientyp: | Konferenz |
Umfang: | print, 4 ref |
ISSN: | 0042-207X (print) |
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