Determination of the carrier collection efficiency function of Si photodiode using spectral sensitivity measurements
In: Semiconductor photodetectors (San Jose CA, 28-29 January 2004)SPIE proceedings series :12-19
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Zugriff:
Results of studies of silicon photodiode quantum efficiency close to the bandgap and some factors influencing photodiode sensitivity are presented. To calculate the carrier collection efficiency function P(x), we used a corrected, explicit expression that takes into account the rear surface reflection of the light. The method of calculation involves solution of the integral equation and allows determination of the carrier collection efficiency function with a high precision. We used the maximum entropy method to optimize the sought quantity and to obtain the best match between theory and experiment. Employing the method proposed in this work allows quantifying such factors as e.g. the reflectance of the rear surface of the die and optical scattering within the diffusion layer, which is vital in designing highly efficient Si photodiodes in the near infrared spectral range.
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Determination of the carrier collection efficiency function of Si photodiode using spectral sensitivity measurements
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Autor/in / Beteiligte Person: | GOUSHCHA, Alexander O ; METZLER, Richard A ; HICKS, Chris ; KHARKYANEN, Valery N ; BEREZETSKA, Natalja M |
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Quelle: | Semiconductor photodetectors (San Jose CA, 28-29 January 2004)SPIE proceedings series :12-19 |
Veröffentlichung: | Bellingham WA: SPIE, 2004 |
Medientyp: | Konferenz |
Umfang: | print, 20 ref |
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