Synthesis of carbon nitride thin films by low-energy ion beam assisted evaporation : on the mechanisms for fullerene-like microstmcture formation

GAGO, R ; NEIDHARDT, J ; et al.

In: Thin solid films, Jg. 483 (2005), Heft 1-2, S. 89-94

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Carbon nitride (CNx) thin films were grown at different substrate temperatures by low-energy (<100 eV) ion beam assistance deposition (LE-IBAD) in order to discern possible formation mechanisms of a fullerene-like (FL) microstructure. The samples are compared to those of well-structured FL-CNx films synthesized by reactive magnetron sputtering (MS). The comparison yields similar trends for both techniques, such as limitation of the nitrogen content at 20-25 at.%, dominance of sp2 hybrids, as well as thermally activated chemical desorption of CxNy species from the substrate during growth. However, CNx films produced by LE-IBAD are amorphous. The lack of FL structural features correlates with a lower degree of sp2 clustering, attributed to the promotion of nitrile groups. Therefore, low-energy ion bombardment is shown not to be a sufficient condition for the growth of FL-CNx. This result reinforces the eventual relevance of pre-formed CxNy species at the sputtering target in MS for the introduction and/or evolution of FL arrangements.

Titel:	Synthesis of carbon nitride thin films by low-energy ion beam assisted evaporation : on the mechanisms for fullerene-like microstmcture formation
Autor/in / Beteiligte Person:	GAGO, R ; NEIDHARDT, J ; VINNICHENKO, M ; KREISSIG, U ; CZIGANY, Zs ; KOLITSCH, A ; HULTMAN, L ; MÖLLER, W
Link:	View record from ScienceDirect (Volltext) View record from PASCAL Archive
Zeitschrift:	Thin solid films, Jg. 483 (2005), Heft 1-2, S. 89-94
Veröffentlichung:	Lausanne: Elsevier Science, 2005
Medientyp:	academicJournal
Umfang:	print, 30 ref
ISSN:	0040-6090 (print)
Schlagwort:	Crystallography Cristallographie cristallogenèse Electronics Electronique Metallurgy, welding Métallurgie, soudage Condensed state physics Physique de l'état condensé Sciences exactes et technologie Exact sciences and technology Physique Physics Domaines interdisciplinaires: science des materiaux; rheologie Cross-disciplinary physics: materials science; rheology Science des matériaux Materials science Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie Methods of deposition of films and coatings; film growth and epitaxy Dépôt assisté par faisceaux électroniques et ioniques; placage ionique Ion and electron beam-assisted deposition; ion plating Composé minéral Inorganic compounds Agrégat atomique Atomic clusters Carbone Molécule Carbon Molecules Carbone nitrure Carbon nitrides Composé binaire Binary compounds Dépendance température Temperature dependence Désorption Desorption Energie activation Activation energy Etude expérimentale Experimental study Evaporation Film Films Fullerènes Fullerenes Magnétron Magnetrons Matériau amorphe Amorphous material Material amorfo Microstructure Mécanisme croissance Growth mechanism Mecanismo crecimiento Méthode IBAD Ion beam assisted deposition method Méthode phase vapeur Growth from vapor Método fase vapor Préparation Preparation Preparación Pulvérisation réactive Reactive sputtering Taux croissance Growth rate C N CNx Substrat Si 68.55.-a Carbon nitride 78.30.Na 81.05.Tp 81.15.Jj Fullerene-like materials Growth mechanisms IBAD
Sonstiges:	Nachgewiesen in: PASCAL Archive Sprachen: English Original Material: INIST-CNRS Document Type: Article File Description: text Language: English Author Affiliations: Institute of Ion Beam Physics and Materials Research, Forschungszentrum Rossendorf, PF-510119, 01314 Dresden, Germany ; Thin Films Physics Division, Department of Physics, Linköping University, 58183, Linkoping, Sweden ; Department of Physics, Kyiv National Taras Shevchenko University, 01033 Kyiv, Ukraine ; Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, PO Box 49, 1525 Budapest, Hungary Rights: Copyright 2006 INIST-CNRS ; CC BY 4.0 ; Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS Notes: Physics and materials science

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