Experimental study on superior mobility in (110)-oriented UTB SOI pMOSFETs
In: IEEE electron device letters, Jg. 26 (2005), Heft 11, S. 836-838
academicJournal
- print, 20 ref
Zugriff:
The superior mobility in (110)-oriented ultrathin body (UTB) pMOSFETs with silicon-on-insulator (SOI) thickness (tSOI) ranging from 32 down to 2.3 nm is experimentally examined for the first time. It is shown that the mobility in (110) UTB pMOSFETs, which is much higher than the universal curve in conventional (100) pMOSFETs, is not degraded until tSOI is thinned to 3 nm. Scattering mechanisms in (110) UTB pMOSFETs are discussed on the basis of the temperature dependence of the mobility. The high mobility in the UTB regime in (110) pMOSFET is attributed to subband modulation by carrier confinement and heavier hole effective mass normal to the channel surface.
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Experimental study on superior mobility in (110)-oriented UTB SOI pMOSFETs
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Autor/in / Beteiligte Person: | TSUTSUI, Gen ; SAITOH, Masumi ; HIRAMOTO, Toshiro |
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Zeitschrift: | IEEE electron device letters, Jg. 26 (2005), Heft 11, S. 836-838 |
Veröffentlichung: | New York, NY: Institute of Electrical and Electronics Engineers, 2005 |
Medientyp: | academicJournal |
Umfang: | print, 20 ref |
ISSN: | 0741-3106 (print) |
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