Influence of heat treatment on indium-tin-oxide anodes and copper phthalocyanine hole injection layers in organic light-emitting diodes

FENENKO, Larysa ; ADACHI, Chihaya

In: Thin solid films, Jg. 515 (2007), Heft 11, S. 4812-4818

Online academicJournal - print, 25 ref

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Modifications of indium-tin-oxide (ITO) and copper phthalocyanine (CuPc) layers by heat treatment aimed at lowering driving voltage in organic light-emitting diodes (OLEDs) are examined. Significant changes were observed in the surface morphology and carrier injection properties of ITO and CuPc layers after annealing at T=250 °C for 0-60 min in a glove box. In the case of ITO annealing, although the ITO work function gradually decreased and the surface of the ITO layer became smoother than that of an unannealed ITO layer, we observed an appreciable decrease in the driving voltage with an increase in annealing time. In the case of CuPc annealing, on the other hand, we observed deterioration of the OLED's characteristics. All devices demonstrated an increase in driving voltage due to the pronounced crystallization of the CuPc layer.

Titel:	Influence of heat treatment on indium-tin-oxide anodes and copper phthalocyanine hole injection layers in organic light-emitting diodes
Autor/in / Beteiligte Person:	FENENKO, Larysa ; ADACHI, Chihaya
Link:	View record from ScienceDirect (Volltext) View record from PASCAL Archive
Zeitschrift:	Thin solid films, Jg. 515 (2007), Heft 11, S. 4812-4818
Veröffentlichung:	Lausanne: Elsevier Science, 2007
Medientyp:	academicJournal
Umfang:	print, 25 ref
ISSN:	0040-6090 (print)
Schlagwort:	Crystallography Cristallographie cristallogenèse Electronics Electronique Metallurgy, welding Métallurgie, soudage Condensed state physics Physique de l'état condensé Sciences exactes et technologie Exact sciences and technology Physique Physics Etat condense: structure electronique, proprietes electriques, magnetiques et optiques Condensed matter: electronic structure, electrical, magnetic, and optical properties Structure électronique et propriétés électriques des surfaces, interfaces, couches minces et structures de basse dimensionnalité Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Doubles couches superficielles, barrières de schottky et travail de sortie Surface double layers, schottky barriers, and work functions Domaines interdisciplinaires: science des materiaux; rheologie Cross-disciplinary physics: materials science; rheology Science des matériaux Materials science Traitement des matériaux et son effet sur la microstructure et les propriétés Treatment of materials and its effects on microstructure and properties Ecrouissage, durcissement par déformation; recuit, trempe, revenu, restauration et recristallisation; textures Cold working, work hardening; annealing, quenching, tempering, recovery, and recrystallization; textures Sciences appliquees Applied sciences Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Dispositifs optoélectroniques Optoelectronic devices Anode Anodo Caractéristique courant tension Voltage current curve Característica corriente tensión Composé organique Organic compounds Compuesto orgánico Cuivre oxyde Copper oxide Cobre óxido Etain oxyde Tin oxide Estaño óxido Indium oxyde Indium oxide Indio óxido Microscopie force atomique Atomic force microscopy Microscopía fuerza atómica Phtalocyanine Phthalocyanine Ftalocianina Recuit thermique Thermal annealing Recocido térmico Spectre absorption Absorption spectrum Espectro de absorción Traitement thermique Heat treatment Tratamiento térmico 8560J Annealing Copper phthalocyanine Indium thin oxide Organic light emitting diodes Time: 7330
Sonstiges:	Nachgewiesen in: PASCAL Archive Sprachen: English Original Material: INIST-CNRS Document Type: Article File Description: text Language: English Author Affiliations: Department ofPhotonics Materials Science, Chitose Institute of Science and Technology (CIST). 758-65 Bibi, Chitose, Hokkaido 066-8655, Japan ; Department of Optoelectronics, V. E. Lashkaryov Institute of Semiconductor Physics of NASU, 41 Nauky Ave, Kyiv 03128, Ukraine ; Center for Future Chemistry, Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395, Japan Rights: Copyright 2007 INIST-CNRS ; CC BY 4.0 ; Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS Notes: Electronics ; Physics and materials science ; Physics of condensed state: electronic structure, electrical, magnetic and optical properties

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