Characterisation of ultrasonically sprayed InxSy buffer layers for Cu(In, Ga)Se2 solar cells
In: Proceedings of Symposium O on thin film chalcogenide photovoltaic materials, EMRS 2006 conference, Nice, France, May 29-June 2, 2006Thin solid films 515(15):6051-6054; Jg. 515 (2007) 15, S. 6051-6054
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In order to replace chemical bath deposited (CBD) CdS buffer layers in Cu(In,Ga)Se2 (CIGS) solar cells by an alternative material, InxSy thin-film buffer layers were prepared by ultrasonic spray pyrolysis at various substrate temperatures. X-ray Diffraction measurements confirmed that the films contained primarily the tetragonal In2S3 phase. X-ray Photoelectron Spectroscopy measurements revealed a small concentration of chlorine impurity throughout the InxSy layer. By depositing the indium sulphide layer as buffer layer in the CIGS solar cell configuration, a maximum solar cell efficiency of 8.9% was achieved, whilst the reference cell with CdS/CIGS on a similar absorber exhibited 12.7% efficiency. Additionally, light soaking enhanced the efficiency of InxSy/CIGS cells primarily by improvements in fill factor and open circuit voltage.
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Characterisation of ultrasonically sprayed InxSy buffer layers for Cu(In, Ga)Se2 solar cells
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Autor/in / Beteiligte Person: | EMITS, K ; BREMAUD, D ; BUECHELER, S ; HIBBERD, C. J ; KAELIN, M ; KHRYPUNOV, G ; MÜLLER, U ; MELLIKOV, E ; TIWARI, A. N |
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Quelle: | Proceedings of Symposium O on thin film chalcogenide photovoltaic materials, EMRS 2006 conference, Nice, France, May 29-June 2, 2006Thin solid films 515(15):6051-6054; Jg. 515 (2007) 15, S. 6051-6054 |
Veröffentlichung: | Lausanne: Elsevier Science, 2007 |
Medientyp: | Konferenz |
Umfang: | print, 14 ref |
ISSN: | 0040-6090 (print) |
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