Electrical, luminescent and photovoltaic properties of the indium tin oxide-GaSe heterojunctions with a thin layer of gallium oxide
In: Proceedings of Symposium J on Synthesis Processing and Characterization of Nanoscale Functional Oxide Films - EMRS 2006 Conference, Nice, May 29-June 2, 2006Thin solid films 515(16):6356-6359; Jg. 515 (2007) 16, S. 6356-6359
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The influence of the thickness of gallium oxide buffer layer onto electrical, photovoltaic and luminescent properties of ITO (indium tin oxide)-GaSe heterojunctions is investigated. It is established that introducing a Ga2O3 layer with a thickness up to 5-6 nm to the ITO-GaSe heterojunctions leads to changing charge transfer mechanisms; to increasing the open-circuit voltage Voc more that twice (thus the situation when Voc considerably exceeds the built-in potential is realized); to increasing of electroluminescence intensity more, than by an order of magnitude; and also to increasing solar efficiency more than twice in comparison with structures, in which a gallium oxide layer was not grown intentionally.
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Electrical, luminescent and photovoltaic properties of the indium tin oxide-GaSe heterojunctions with a thin layer of gallium oxide
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Autor/in / Beteiligte Person: | DRAPAK, S. I ; KATERYNCHYK, V. M ; KOVALYUK, Z. D |
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Quelle: | Proceedings of Symposium J on Synthesis Processing and Characterization of Nanoscale Functional Oxide Films - EMRS 2006 Conference, Nice, May 29-June 2, 2006Thin solid films 515(16):6356-6359; Jg. 515 (2007) 16, S. 6356-6359 |
Veröffentlichung: | Lausanne: Elsevier Science, 2007 |
Medientyp: | Konferenz |
Umfang: | print, 20 ref |
ISSN: | 0040-6090 (print) |
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