Electron spin resonance in thin film silicon after low temperature electron irradiation

ASTAKHOV, O ; FINGER, F ; et al.

In: Proceedings of symposium I on thin films for large area electronics: EMRS 2007[2006] conference, Nice, FranceThin solid films 515(19):7513-7516

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Paramagnetic defects in amorphous and microcrystalline silicon (a-Si:H and μc-Si:H) with various structure compositions and doping levels were investigated by electron spin resonance (ESR). Samples were prepared by PECVD. The defect density was varied with 2 MeV electron bombardment at 100 K and stepwise annealing in the range of 80 K-433 K. In intrinsic material the spin density of the dominant ESR signal, presumably originating from dangling bonds (db), increases by up to 3 orders of magnitude after irradiation. In doped μc-Si:H material the pronounced conduction electron (CE) resonance disappears after irradiation and is replaced by the db resonance like in the irradiated intrinsic material. Generally the initial spin density and the line shape can be restored upon annealing at 433 K. Additional features at g-values of g ≈ 2.010 and g≈2.000 in the ESR spectra are observed after irradiation together with the strongly enhanced Si db line at about g=2.004-2.005. These features decrease rapidly on the first annealing steps and cannot be observed after the final annealing stage.

Titel:	Electron spin resonance in thin film silicon after low temperature electron irradiation
Autor/in / Beteiligte Person:	ASTAKHOV, O ; FINGER, F ; CARIUS, R ; LAMBERTZ, A ; PETRUSENKO, Yu ; BORYSENKO, V ; BARANKOV, D
Link:	View record from ScienceDirect (Volltext) View record from PASCAL Archive
Quelle:	Proceedings of symposium I on thin films for large area electronics: EMRS 2007[2006] conference, Nice, FranceThin solid films 515(19):7513-7516
Veröffentlichung:	Lausanne: Elsevier Science, 2007
Medientyp:	Konferenz
Umfang:	print, 14 ref
ISSN:	0040-6090 (print)
Schlagwort:	Crystallography Cristallographie cristallogenèse Electronics Electronique Metallurgy, welding Métallurgie, soudage Condensed state physics Physique de l'état condensé Sciences exactes et technologie Exact sciences and technology Physique Physics Etat condense: structure, proprietes mecaniques et thermiques Condensed matter: structure, mechanical and thermal properties Structure des liquides et des solides; cristallographie Structure of solids and liquids; crystallography Effets physiques d'irradiation, défauts d'irradiation Physical radiation effects, radiation damage Electrons et positons Electrons and positron radiation effects Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques) Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Structure et morphologie de couches minces Thin film structure and morphology Défauts et impuretés: dopage, implantation, distribution, concentration, etc Defects and impurities: doping, implantation, distribution, concentration, etc Domaines interdisciplinaires: science des materiaux; rheologie Cross-disciplinary physics: materials science; rheology Science des matériaux Materials science Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie Methods of deposition of films and coatings; film growth and epitaxy Dépôt chimique en phase vapeur (incluant le cvd activé par plasma, mocvd, etc.) Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Addition indium Indium additions Addition silicium Silicon additions Couche mince Thin films Cérium Cerium Densité défaut Defect density Densidad defecto Densité spin Spin density Dopage Doping Effet rayonnement Radiation effects Electron conduction Conduction electron Electrón conducción Irradiation électron Electron irradiation Irradiación electrón Liaison disponible Dangling bonds Matériau amorphe hydrogéné Amorphous hydrogenated material Matériau paramagnétique Paramagnetic materials Méthode PECVD PECVD Profil raie Line shape Recuit Annealing Résonance paramagnétique éléctronique Electron paramagnetic resonance Silicium Silicon Température électron Electron temperature 6180F 6855L 8115G Si a-Si:H Amorphous and microcrystalline silicon Defects ESR
Sonstiges:	Nachgewiesen in: PASCAL Archive Sprachen: English Original Material: INIST-CNRS Document Type: Conference Paper File Description: text Language: English Author Affiliations: Forschungszentrum Jülich, Institute of Photovoltaics, 52425 Jülich, Germany ; National Science Center-Kharkov Institute of Physics & Technology, Institute of Materials Science & Technology, 61108, Kharkov, Ukraine Rights: Copyright 2007 INIST-CNRS ; CC BY 4.0 ; Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS Notes: Physics and materials science ; Physics of condensed state: structure, mechanical and thermal properties

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