Analytical models of front- and back-gate potential distribution and threshold voltage for recessed source/drain UTB SOI MOSFETs

SVILICIC, B ; JOVANOVIC, V ; et al.

In: Solid-state electronics, Jg. 53 (2009), Heft 5, S. 540-547

Online academicJournal - print, 21 ref

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Front-gate and back-gate potential distributions and threshold voltage of recessed source/drain (ReS/D) ultrathin body (UTB) silicon-on-insulator (SOI) MOSFETs are modeled. The analytical expressions of the front-gate and the back-gate potential distributions are derived by assuming a parabolic potential variation perpendicular to channel and by solving 2D Poisson's equation. Based on strong inversion criterion applied to the surface potential minimum value, threshold voltage model of the short channel ReS/D UTB SOI MOSFETs is derived. The model is verified by comparison with 2D numerical device simulator over a wide range of different material and geometrical parameters and very good agreement is obtained.

Titel:	Analytical models of front- and back-gate potential distribution and threshold voltage for recessed source/drain UTB SOI MOSFETs
Autor/in / Beteiligte Person:	SVILICIC, B ; JOVANOVIC, V ; SULIGOJ, T
Link:	View record from ScienceDirect (Volltext) View record from PASCAL Archive
Zeitschrift:	Solid-state electronics, Jg. 53 (2009), Heft 5, S. 540-547
Veröffentlichung:	Kidlington: Elsevier, 2009
Medientyp:	academicJournal
Umfang:	print, 21 ref
ISSN:	0038-1101 (print)
Schlagwort:	Electronics Electronique Sciences exactes et technologie Exact sciences and technology Sciences appliquees Applied sciences Appareillage électronique et fabrication. Composants passifs, circuits imprimés, connectique Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors Electrotechnique. Electroenergetique Electrical engineering. Electrical power engineering Electronique de puissance, alimentations électriques Power electronics, power supplies Canal court Short channel Canal corto Couche ultramince Ultrathin films Distribution potentiel Potential distribution Distribución potencial Electronique puissance Power electronics Electrónica potencia Equation Poisson Poisson equation Ecuación Poisson Etude comparative Comparative study Estudio comparativo Modèle 2 dimensions Two dimensional model Modelo 2 dimensiones Méthode analytique Analytical method Método analítico Paramètre géométrique Geometrical parameter Parámetro geométrico Potentiel surface Surface potential Potencial superficie Seuil tension Voltage threshold Umbral tensión Simulateur Simulator Simulador Source tension Voltage source Fuente voltaje Technologie silicium sur isolant Silicon on insulator technology Tecnología silicio sobre aislante Transistor MOSFET MOSFET Recessed source/drain SOI Short channel effects Silicon-on-insulator Threshold voltage Two-dimensional (2D) Poisson's equation
Sonstiges:	Nachgewiesen in: PASCAL Archive Sprachen: English Original Material: INIST-CNRS Document Type: Article File Description: text Language: English Author Affiliations: Department of Marine Electronics and Communications, Faculty of Maritime Studies, University of Rijeka, Studentska ulica 2, 51000 Rijeka, Croatia ; Department of Electronics, Microelectronics, Computing and Intelligent Systems, Faculty of Electrical Engineering and Computing, University of Zagreb, Croatia ; ECTM-DIMES, Delft University of Technology, Netherlands Rights: Copyright 2009 INIST-CNRS ; CC BY 4.0 ; Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS Notes: Electrical engineering. Electroenergetics ; Electronics

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