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The electrical characteristics of two kinds of n-type SOI-MOSFETs are analyzed and compared in order to build a consistent model. The first kind is an Ultra-Thin Body (UTB) device for which the channel thickness is equal to the initial SOI wafer thickness value (here 46 nm). The second kind is what we refer to Nano-Scale Body (NSB) device for which the initial SOI channel is thinned down to 1.6 nm using a recessed-gate process. The drain current values were found surprisingly different by three orders of magnitude. Such a huge contrast was not found coherent with the literature, reporting the decrease of the electron mobility with the channel thickness. We interpret our result by the probable influence of an extreme drain-to-source series resistance rather than by vanishing carrier mobility. The interpretation is sustained experimentally by the Rm-L and C-V methods. By integrating a gate-voltage dependence to the series resistance, the linear and saturation regions of the output characteristics of the NSB can be analytically derived from the UTB ones. This simple modeling approach may be useful to interpret anomalous electrical behavior of other nano-devices in which series resistance is of a great concern.

Titel:	Comparative study of NSB and UTB SOI MOSFETs characteristics by extraction of series resistance
Autor/in / Beteiligte Person:	KARSENTY, A ; CHELLY, A
Link:	View record from ScienceDirect (Volltext) View record from PASCAL Archive
Zeitschrift:	Solid-state electronics, Jg. 91 (2014), S. 28-35
Veröffentlichung:	Kidlington: Elsevier, 2014
Medientyp:	academicJournal
Umfang:	print, 41 ref
ISSN:	0038-1101 (print)
Schlagwort:	Electronics Electronique Sciences exactes et technologie Exact sciences and technology Sciences appliquees Applied sciences Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors Circuits intégrés Integrated circuits Conception. Technologies. Analyse fonctionnement. Essais Design. Technologies. Operation analysis. Testing Fabrication microélectronique (technologie des matériaux et des surfaces) Microelectronic fabrication (materials and surfaces technology) Electronique moléculaire, nanoélectronique Molecular electronics, nanoelectronics Capacité électrique Capacitance Capacitancia Caractéristique électrique Electrical characteristic Característica eléctrica Circuit intégré Integrated circuit Circuito integrado Couche ultramince Ultrathin films Courant drain Drain current Corriente dren Dépendance tension Voltage dependence Etude comparative Comparative study Estudio comparativo Extraction caractéristique Feature extraction Fabrication microélectronique Microelectronic fabrication Fabricación microeléctrica Implantation ion Ion implantation Implantación ión Mobilité porteur charge Charge carrier mobility Movilidad portador carga Mobilité électron Electron mobility Movilidad electrón Modélisation Modeling Modelización Nanoélectronique Nanoelectronics Nanoelectrónica Pastille électronique Wafer Pastilla electrónica Résistance série Series resistance Resistencia en serie Semiconducteur type n n type semiconductor Semiconductor tipo n Technologie MOS MOS technology Tecnología MOS Technologie SIMOX SIMOX technology Tecnología SIMOX Technologie silicium sur isolant Silicon on insulator technology Tecnología silicio sobre aislante Tension de grille Gate voltage Voltaje de rejilla Transistor MOSFET MOSFET Gate-to-channel capacitance Mobility extraction SIMOX SOI MOSFET
Sonstiges:	Nachgewiesen in: PASCAL Archive Sprachen: English Original Material: INIST-CNRS Document Type: Article File Description: text Language: English Author Affiliations: Faculty of Engineering, Jerusalem College of Technology, Jerusalem 91160, Israel ; Faculty of Engineering, Bar-Ilan University, Ramat Can 52900, Israel Rights: Copyright 2015 INIST-CNRS ; CC BY 4.0 ; Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS Notes: Electronics

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Comparative study of NSB and UTB SOI MOSFETs characteristics by extraction of series resistance