Study of the correlation between structural and photoluminescence properties of CdSe thin films deposited by close-spaced vacuum sublimation
In: Materials science in semiconductor processing, Jg. 26 (2014), S. 663-668
Online
academicJournal
- print, 46 ref
CdSe polycrystalline films were deposited by a close-spaced vacuum sublimation method at different substrate temperatures (Ts) using glass slides as substrates. At Ts ≤ 673 K the films have a structure with strong dispersion of grain size (d) (from 0.1 to 0.3 μm). In this case the layer-by-layer mechanism determines the growth process of the layers. For Ts=873 K they have a columnar-like structure with a clear growth texture and the average grain size d=3-4 μm. The films obtained at Ts > 473 K are n-type and only correspond to a single wurtzite phase. The crystallites are preferentially oriented with the (102) planes parallel to the substrate. At lower temperatures the films are bi-phase. The microstress level in CdSe films obtained at Ts=873 K (0.5 × 10-3) is considerably smaller than for the films deposited at Ts=773 K (4.0 × 10-3). Increase of the value of Ts improves the stoichiometry of CdSe films. Analysis of the low-temperature photoluminescence (PL) spectra let us determine the nature and energy of point and extended defects in the investigated films. It was shown that the films contain Na(Li) and P residual impurities. The results of the structural and PL measurements showed that the CdSe polycrystalline films are of fairly good crystal and optical quality for Ts=873 K and can be suitable for various applications.
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Study of the correlation between structural and photoluminescence properties of CdSe thin films deposited by close-spaced vacuum sublimation
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Autor/in / Beteiligte Person: | GNATENKO, Yu. P ; OPANASYUK, A. S ; IVASHCHENKO, M. M ; BUKIVSKIJ, P. M ; FARYNA, I. O |
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Zeitschrift: | Materials science in semiconductor processing, Jg. 26 (2014), S. 663-668 |
Veröffentlichung: | Kidlington: Elsevier, 2014 |
Medientyp: | academicJournal |
Umfang: | print, 46 ref |
ISSN: | 1369-8001 (print) |
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