Gate Overdrive with Split-Circuit Biasing to Substitute for Body Biasing in FinFET and UTB FDSOI Circuits.
In: ISVLSI; (2016) S. 467-472
Konferenz
Zugriff:
Titel: |
Gate Overdrive with Split-Circuit Biasing to Substitute for Body Biasing in FinFET and UTB FDSOI Circuits.
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Autor/in / Beteiligte Person: | Whetzel, Andrew ; Stan, Mircea R. |
Link: | |
Quelle: | ISVLSI; (2016) S. 467-472 |
Veröffentlichung: | 2016 |
Medientyp: | Konferenz |
DOI: | 10.1109/ISVLSI.2016.136 |
Sonstiges: |
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