BSIM—SPICE Models Enable FinFET and UTB IC Designs
In: IEEE Access, Jg. 1 (2013), S. 201-215
Online
academicJournal
Zugriff:
Two turn-key surface potential-based compact models are developed to simulate multigate transistors for integrated circuit (IC) designs. The BSIM-CMG (common-multigate) model is developed to simulate double-, triple-, and all-around-gate FinFETs and it is selected as the world's first industry-standard compact model for the FinFET. The BSIM-IMG (independent-multigate) model is developed for independent double-gate, ultrathin body (UTB) transistors, capturing the dynamic threshold voltage adjustment with back gate bias. Starting from long-channel devices, the basic models are first obtained using a Poisson-carrier transport approach. The basic models agree with the results of numerical two-dimensional device simulators. The real-device effects then augment the basic models. All the important real-device effects, such as short-channel effects (SCEs), quantum mechanical confinement effects, mobility degradation, and parasitics are included in the models. BSIM-CMG and BSIM-IMG have been validated with hardware silicon-based data from multiple technologies. The developed models also meet the stringent quality assurance tests expected of production level models.
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BSIM—SPICE Models Enable FinFET and UTB IC Designs
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Autor/in / Beteiligte Person: | Paydavosi, Navid ; Venugopalan, Sriramkumar ; Yogesh Singh Chauhan ; Juan Pablo Duarte ; Jandhyala, Srivatsava ; Niknejad, Ali M. ; Chenming Calvin Hu |
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Zeitschrift: | IEEE Access, Jg. 1 (2013), S. 201-215 |
Veröffentlichung: | IEEE, 2013 |
Medientyp: | academicJournal |
ISSN: | 2169-3536 (print) |
DOI: | 10.1109/ACCESS.2013.2260816 |
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