Temperature Dependent Band Gap Correction Model Using Tight-Binding Approach for UTB Device Simulations
In: IEEE Transactions on Nanotechnology, Jg. 22 (2023), S. 8-13
academicJournal
Zugriff:
Titel: |
Temperature Dependent Band Gap Correction Model Using Tight-Binding Approach for UTB Device Simulations
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Autor/in / Beteiligte Person: | Mishra, N.V. ; Solanki, R. ; Kansal, H. ; Medury, A.S. |
Zeitschrift: | IEEE Transactions on Nanotechnology, Jg. 22 (2023), S. 8-13 |
Veröffentlichung: | 2023 |
Medientyp: | academicJournal |
ISSN: | 1536-125X (print) ; 1941-0085 (print) |
DOI: | 10.1109/TNANO.2022.3232778 |
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