Correlation of Radiation-Induced Interface Traps With Band Edge Energy Through Band Structure-Based Analysis of Electrostatics of UTB SOI Devices
In: IEEE Transactions on Device and Materials Reliability, Jg. 24 (2024-06-01), Heft 2, S. 225-232
academicJournal
Zugriff:
Titel: |
Correlation of Radiation-Induced Interface Traps With Band Edge Energy Through Band Structure-Based Analysis of Electrostatics of UTB SOI Devices
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Autor/in / Beteiligte Person: | Mishra, N.V. ; Medury, A.S. |
Zeitschrift: | IEEE Transactions on Device and Materials Reliability, Jg. 24 (2024-06-01), Heft 2, S. 225-232 |
Veröffentlichung: | 2024 |
Medientyp: | academicJournal |
ISSN: | 1530-4388 (print) ; 1558-2574 (print) |
DOI: | 10.1109/TDMR.2024.3366592 |
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