Simulation of Si and Ge UTB MOSFETs using Monte Carlo method based on the quantum Boltzmann equation
In: 10th International Workshop on Computational Electronics; (2004) S. 186-187
Konferenz
Zugriff:
Titel: |
Simulation of Si and Ge UTB MOSFETs using Monte Carlo method based on the quantum Boltzmann equation
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Autor/in / Beteiligte Person: | Du, Gang ; Liu, Xiaoyan ; Xia, Zhiliang ; Han, Ruqi |
Quelle: | 10th International Workshop on Computational Electronics; (2004) S. 186-187 |
Veröffentlichung: | 2004 |
Medientyp: | Konferenz |
ISBN: | 0-7803-8649-3 (print) ; 978-0-7803-8649-5 (print) |
DOI: | 10.1109/IWCE.2004.1407389 |
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