Modeling study of the impact of surface roughness on silicon and Germanium UTB MOSFETs
In: IEEE Transactions on Electron Devices, Jg. 52 (2005-11-01), Heft 11, S. 2430-2439
academicJournal
Zugriff:
Titel: |
Modeling study of the impact of surface roughness on silicon and Germanium UTB MOSFETs
|
---|---|
Autor/in / Beteiligte Person: | Low, T. ; Li, Ming-Fu ; Samudra, G. ; Yeo, Yee-Chia ; Zhu, Chunxiang ; Chin, A. ; Kwong, Dim-Lee |
Zeitschrift: | IEEE Transactions on Electron Devices, Jg. 52 (2005-11-01), Heft 11, S. 2430-2439 |
Veröffentlichung: | 2005 |
Medientyp: | academicJournal |
ISSN: | 0018-9383 (print) ; 1557-9646 (print) |
DOI: | 10.1109/TED.2005.857188 |
Sonstiges: |
|