Analytical modeling of threshold voltage for Nanoscale Symmetric Double Gate (SDG) MOSFET with Ultra Thin Body (UTB)
In: International Workshop on Physics of Semiconductor Devices; (2007-12-01) S. 277-280
Konferenz
Zugriff:
Titel: |
Analytical modeling of threshold voltage for Nanoscale Symmetric Double Gate (SDG) MOSFET with Ultra Thin Body (UTB)
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Autor/in / Beteiligte Person: | Vishvakarma, S. K. ; Raj, B. ; Singh, R. ; Panda, C. R. ; Saxena, A. K. ; Dasgupta, S. |
Quelle: | International Workshop on Physics of Semiconductor Devices; (2007-12-01) S. 277-280 |
Veröffentlichung: | 2007 |
Medientyp: | Konferenz |
ISBN: | 978-1-4244-1727-8 (print) ; 978-1-4244-1728-5 (print) |
DOI: | 10.1109/IWPSD.2007.4472499 |
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